54S416T-6 datasheet: High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA- документация на электронные компоненты ChipManual.ru

54S416T-6 Datasheet
Название:	54S416T-6
Информация:	High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
Производитель:	CRMT
Темп. режим:	Min: 0 \| Max: 70
Корпус:	TSOP
Кол-во выводов:	54
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54S416T-6 Datasheet