MJE2955T datasheet: PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.- документация на электронные компоненты ChipManual.ru

MJE2955T Datasheet
Название:	MJE2955T
Информация:	PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W.
Производитель:	USHA
Темп. режим:	Min: -65 \| Max: 150
Корпус:	N/A
Кол-во выводов:	3
Скачать Datasheet:	MJE2955T.PDF (0Kb)

MJE2955T Datasheet