MJE3055T - NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T Datasheet |
Название: | MJE3055T |
Информация: | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
Производитель: | USHA |
Темп. режим: | Min: -65 | Max: 150 |
Корпус: | N/A |
Кол-во выводов: | 3 |
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MJE3055T.PDF
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