W4NXD8C-0000 - Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4NXD8C-0000 Datasheet |
Название: | W4NXD8C-0000 |
Информация: | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
Производитель: | CREE |
Темп. режим: | Min: - | Max: - |
Корпус: | N/A |
Кол-во выводов: | - |
Скачать Datasheet: |
W4NXD8C-0000.PDF
|
|