W4NXE8C-SD00 - Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4NXE8C-SD00 Datasheet |
Название: | W4NXE8C-SD00 |
Информация: | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
Производитель: | CREE |
Темп. режим: | Min: - | Max: - |
Корпус: | N/A |
Кол-во выводов: | - |
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W4NXE8C-SD00.PDF
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