W6NXD0K-0000 - Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD0K-0000 Datasheet |
Название: | W6NXD0K-0000 |
Информация: | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
Производитель: | CREE |
Темп. режим: | Min: - | Max: - |
Корпус: | N/A |
Кол-во выводов: | - |
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W6NXD0K-0000.PDF
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