MJE3055T datasheet: NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.- документация на электронные компоненты ChipManual.ru

MJE3055T Datasheet
Название:	MJE3055T
Информация:	NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
Производитель:	USHA
Темп. режим:	Min: -65 \| Max: 150
Корпус:	N/A
Кол-во выводов:	3
Скачать Datasheet:	MJE3055T.PDF (0Kb)

MJE3055T Datasheet